SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia BUK9K35-100LX is a dual N-channel logic level MOSFET housed in an LFPAK56D (SOT1205) package. It integrates two silicon dies for space efficiency and utilizes Trench12 technology. The device features a drain-source voltage of 100 V, a continuous drain current of 23 A at 25 °C mounting base temperature, and a maximum on-state resistance of 35 mΩ at VGS = 10 V. Total power dissipation reaches 42 W. It operates within a junction temperature range of -55 °C to +175 °C and includes side-wettable flanks for robust soldering.
Verify the specific ordering suffix 'X' against the official Nexperia datasheet or distributor documentation to confirm reel packaging specifications. Ensure the component matches the SOT1205 package outline and marking code 9351HL. Confirm that the application environment meets the AEC-Q101 qualification requirements and thermal design limits specified in the product data sheet.
Select this component when space-constrained automotive designs require dual N-channel isolation in a single surface-mount footprint. The logic-level gate drive compatibility simplifies interface with standard microcontrollers. Evaluate PCB thermal design carefully, as practical current handling is limited by board layout and operating temperature rather than just the absolute maximum ratings.
This part belongs to the Nexperia BUK9K series of automotive-grade MOSFETs. It shares the LFPAK56D package form factor with other devices in the lineup but differs in electrical parameters such as RDS(on) and breakdown voltage. The series is characterized by Trench12 technology and AEC-Q101 qualification for high-performance automotive applications.
Direct substitutes include BUK9K32-100EX and BUK9K31-100L, which share similar voltage ratings and package types. Verify pinout compatibility and ensure the replacement's RDS(on) and thermal characteristics meet the original design requirements.