BUK9K5R6-30EX

BUK9K5R6-30EX

$1.30
  • Description:MOSFET 2N-CH 30V 40A LFPAK56D
  • Series:-

SKU:e193bcd5fb6f Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 40A LFPAK56D
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:40A
  • Rds On (Max) @ Id, Vgs:5.8mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:22.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:2480pF @ 25V
  • Power - Max:64W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q100

Download product information

BUK9K5R6-30EX

Overview

The BUK9K5R6-30EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 30 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device has a maximum on-state resistance of 5.8 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation is rated at 64 W. It operates within a junction temperature range of -55 °C to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Dual MOSFET configuration with Q101 compliance for automotive applications
  • Repetitive avalanche rated for robust performance under transient conditions
  • True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
  • Suitable for thermally demanding environments due to 175 °C junction temperature rating

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against official Nexperia documentation to confirm packaging details such as reel size or tape specifications. Ensure the component matches the LFPAK56D package outline SOT1205. Confirm that the marking code corresponds to the required production version. Cross-reference the datasheet revision date to ensure compatibility with design requirements.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact surface-mount footprint. The low on-state resistance supports efficient power switching in 12 V automotive architectures. Verify thermal management strategies align with the specified thermal resistance values. Ensure gate drive voltages meet the logic level requirements for optimal conduction characteristics across the operating temperature range.

Part Context

This part belongs to the Nexperia BUK9K5 series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve low conduction losses. The LFPAK56D package provides enhanced thermal performance compared to standard plastic packages. The product is designed and qualified specifically for high-performance automotive applications requiring reliability and ruggedness.

Replacement Considerations

Check for direct substitutes within the BUK9K5 family with compatible pinouts and electrical ratings. Verify that alternative components maintain the same LFPAK56D package dimensions for board compatibility. Ensure replacement parts also hold AEC-Q101 qualification if automotive usage is intended.

BUK9K5R6-30EXBUK9K5R6-30EX
$1.30
Buy Now