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The BUK9K5R6-30EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 30 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device has a maximum on-state resistance of 5.8 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation is rated at 64 W. It operates within a junction temperature range of -55 °C to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific suffix 'EX' against official Nexperia documentation to confirm packaging details such as reel size or tape specifications. Ensure the component matches the LFPAK56D package outline SOT1205. Confirm that the marking code corresponds to the required production version. Cross-reference the datasheet revision date to ensure compatibility with design requirements.
Select this component for designs requiring dual N-channel isolation in a compact surface-mount footprint. The low on-state resistance supports efficient power switching in 12 V automotive architectures. Verify thermal management strategies align with the specified thermal resistance values. Ensure gate drive voltages meet the logic level requirements for optimal conduction characteristics across the operating temperature range.
This part belongs to the Nexperia BUK9K5 series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve low conduction losses. The LFPAK56D package provides enhanced thermal performance compared to standard plastic packages. The product is designed and qualified specifically for high-performance automotive applications requiring reliability and ruggedness.
Check for direct substitutes within the BUK9K5 family with compatible pinouts and electrical ratings. Verify that alternative components maintain the same LFPAK56D package dimensions for board compatibility. Ensure replacement parts also hold AEC-Q101 qualification if automotive usage is intended.