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The Nexperia BUK9K6R8-40EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) surface-mount package. It features a drain-source voltage of 40 V, continuous drain current of 40 A, and total power dissipation of 64 W at 25 °C mounting base temperature. The typical on-state resistance is 7.2 mΩ at 25 °C and 14.5 mΩ at 175 °C. Key dynamic parameters include a total gate charge of 22.2 nC, turn-on delay time of 13 ns, rise time of 22 ns, turn-off delay time of 27 ns, and fall time of 20 ns.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component meets the required AEC-Q101 qualification status for your intended application environment. Ensure compatibility with the LFPAK56D footprint during PCB layout review.
Select this component for applications requiring dual N-channel switching in a compact surface-mount form factor. The low on-state resistance supports efficient power handling in thermally demanding environments up to 175 °C junction temperature. Verify that the logic level gate drive requirements align with the specified threshold voltage characteristics across the operating temperature range.
This device belongs to the Nexperia BUK9 series of automotive-qualified MOSFETs. It employs TrenchMOS technology to achieve enhanced power density and efficiency within the LFPAK56D package. The product is designed specifically for high-performance automotive applications requiring robust thermal management and reliable switching capabilities under varying load conditions.
BUK9K6R8-40E
The maximum junction temperature is 175 °C.
Yes, it is designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.
The peak drain current is 265 A under pulsed conditions with a pulse duration of 10 µs or less.