BUK9K8R7-40EX

BUK9K8R7-40EX

$1.45
  • Description:MOSFET 2N-CH 40V 30A LFPAK56D
  • Series:TrenchMOS™

SKU:a392d65278b3 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 30A LFPAK56D
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:30A
  • Rds On (Max) @ Id, Vgs:8mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:15.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:2110pF @ 25V
  • Power - Max:53W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q100

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BUK9K8R7-40EX

Overview

The BUK9K8R7-40EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The typical on-state resistance is 7.66 mΩ at VGS = 5 V, rising to 15.4 mΩ at 175 °C. Total power dissipation reaches 53 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Dual MOSFET configuration in a single surface-mounted package
  • Automotive qualified to AEC-Q101 standard for high performance applications
  • True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
  • Repetitive avalanche rated for robustness in demanding environments

Applications

  • 12 V automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against the official Nexperia datasheet to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the SOT1205 outline dimensions. Confirm that the marking code 98E740 aligns with the intended revision. Cross-reference the AEC-Q101 qualification status if automotive compliance is required for the final assembly.

Selection Notes

Select this component when a compact dual N-channel solution is required for 12 V automotive architectures. The low RDS(on) minimizes conduction losses in power switching paths. The logic level gate drive simplifies interface with standard microcontrollers or drivers. Verify thermal management requirements given the 175 °C junction limit and the specific thermal resistance characteristics of the LFPAK56D footprint.

Part Context

This part belongs to the Nexperia BUK9 series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve high power density within the LFPAK56D plastic single-ended surface mounted package. The dual configuration allows for independent control of two channels within a single 8-lead footprint, optimizing board space for motor and load control applications.

Replacement Considerations

BUK7K8R7-40E is a documented alternative within the same family offering similar electrical characteristics and package type.

BUK9K8R7-40EXBUK9K8R7-40EX
$1.45
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