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The BUK9K8R7-40EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The typical on-state resistance is 7.66 mΩ at VGS = 5 V, rising to 15.4 mΩ at 175 °C. Total power dissipation reaches 53 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific suffix 'EX' against the official Nexperia datasheet to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the SOT1205 outline dimensions. Confirm that the marking code 98E740 aligns with the intended revision. Cross-reference the AEC-Q101 qualification status if automotive compliance is required for the final assembly.
Select this component when a compact dual N-channel solution is required for 12 V automotive architectures. The low RDS(on) minimizes conduction losses in power switching paths. The logic level gate drive simplifies interface with standard microcontrollers or drivers. Verify thermal management requirements given the 175 °C junction limit and the specific thermal resistance characteristics of the LFPAK56D footprint.
This part belongs to the Nexperia BUK9 series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve high power density within the LFPAK56D plastic single-ended surface mounted package. The dual configuration allows for independent control of two channels within a single 8-lead footprint, optimizing board space for motor and load control applications.
BUK7K8R7-40E is a documented alternative within the same family offering similar electrical characteristics and package type.