BUK9M10-30EX

$1.10

Description：MOSFET N-CH 30V 54A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1410b3d2e45d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 54A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：12.2 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1249 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：55W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

Download product information

BUK9M10-30EX

Overview

The BUK9M10-30EX is a logic level N-channel MOSFET in an LFPAK33 (SOT1210) package using TrenchMOS technology. It is qualified to AEC-Q101 for automotive applications. Key parameters include a drain-source voltage of 30 V, continuous drain current of 54 A at 25 °C mounting base temperature, and total power dissipation of 55 W. The typical on-state resistance is 8.1 mΩ at VGS = 5 V and ID = 15 A. Gate threshold voltage exceeds 0.5 V at 175 °C. Thermal resistance from junction to mounting base is typically 2.46 K/W.

Feature Summary

AEC-Q101 compliant for high performance automotive applications
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments with a 175 °C rating
True logic level gate with low threshold voltage at elevated temperatures

Applications

12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against the manufacturer's official ordering information to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the component matches the LFPAK33 package outline SOT1210. Confirm that the marking code corresponds to the intended part number before integration into production designs.

Selection Notes

Select this component for circuits requiring low on-state resistance and high current handling in automotive environments. The logic level gate drive capability allows compatibility with standard gate drive sources. Consider the thermal resistance and power dissipation limits when designing heat management solutions for the LFPAK33 package.

Part Context

This device belongs to Nexperia's BUK9M series of N-channel MOSFETs utilizing TrenchMOS technology. The series is designed for high-performance automotive applications, offering improved thermal performance and ruggedness compared to standard MOSFETs. The LFPAK33 package provides a compact solution with a large mounting base for efficient heat dissipation.

Replacement Considerations

Check for direct substitutes within the BUK9M series with similar voltage and current ratings. Verify pinout compatibility with the LFPAK33 (SOT1210) package. Ensure any replacement also meets AEC-Q101 requirements if used in automotive contexts.