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Product Detailed Parameters
- Description：MOSFET N-CH 40V 53A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：13.4 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1721 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：62W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The BUK9M11-40EX is an N-channel logic level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 40 V and a maximum continuous drain current of 53 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 11 mΩ at VGS = 5 V and ID = 15 A. Total power dissipation reaches 62 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with AEC-Q101 automotive standards for high-performance applications
- Features true logic level gate operation with low threshold voltage at elevated temperatures
- Capable of handling thermally demanding environments due to 175 °C operating rating
- Includes repetitive avalanche rating for robust construction
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Ensure the procurement channel provides valid traceability for AEC-Q101 qualified components. Confirm that the received part matches the marking code '91140E' as defined in the datasheet. Validate thermal management requirements align with the specified mounting base temperature limits before finalizing orders.
Selection Notes
Select this component when designing circuits requiring logic-level gate drive compatibility alongside high current handling in compact packages. The LFPAK33 package offers efficient thermal dissipation suitable for space-constrained automotive designs. Consider the 11 mΩ on-resistance for minimizing conduction losses in power switching applications. Verify that the system's gate drive voltage meets the 5 V requirement for optimal RDSon performance.
Part Context
This device belongs to the BUK9M series of N-channel MOSFETs from Nexperia, designed specifically for automotive and industrial power switching. The series utilizes TrenchMOS technology to achieve low on-resistance and fast switching speeds within the LFPAK33 footprint. It is engineered to meet rigorous automotive reliability standards while providing robust performance in high-temperature environments.
Replacement Considerations
Consult official Nexperia cross-reference guides for verified substitutes. Ensure any replacement maintains AEC-Q101 compliance if used in automotive contexts. Verify pinout compatibility and thermal characteristics match the original LFPAK33 design constraints.
