BUK9M12-60EX

$0.95

Description：MOSFET N-CH 60V 54A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ee8c20f5b4fa Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 54A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：11mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2769 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：79W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M12-60EX

Overview

The BUK9M12-60EX is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 54 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 12 mΩ at VGS = 5 V and ID = 15 A. Total power dissipation reaches 79 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards for high-performance applications
Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
Suitable for thermally demanding environments due to 175 °C junction temperature rating
Repetitive avalanche rated for robust performance in demanding switching scenarios

Applications

12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against the official Nexperia ordering information table to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the requested part matches the exact type number listed in the datasheet's ordering section to avoid discrepancies in marking codes or package versions. Cross-reference the latest product status to confirm production availability and data sheet revisions before finalizing procurement plans.

Selection Notes

Select this component for designs requiring low conduction losses and high efficiency in 12 V automotive architectures. The logic level gate drive allows compatibility with standard microcontroller outputs without additional level shifting. Consider the thermal resistance from junction to mounting base when designing heat dissipation strategies for high-current loads. Verify that the peak pulsed drain current requirements remain within the safe operating area limits defined in the datasheet curves.

Part Context

This device belongs to Nexperia's portfolio of N-channel MOSFETs designed for automotive and industrial markets. It employs TrenchMOS technology to achieve low on-resistance within the LFPAK33 surface-mount package. The series is engineered to meet stringent automotive reliability standards while providing robust electrical performance for power switching applications in modern vehicle electronics.