ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V 9.3A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7.4 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：695 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
Download product information
Overview
The BUK9M156-100EX is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 100 V and a continuous drain current of 9.3 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 156 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation is rated at 36 W under the same thermal conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 standard for high performance automotive applications
- Capable of handling thermally demanding environments with a 175 °C rating
- Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Rated for repetitive avalanche energy
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Ensure the procurement channel provides valid traceability for AEC-Q101 qualified components. Confirm that the received parts match the marking code 915610 as specified in the product data sheet. Validate RoHS compliance status through the manufacturer's latest release notes before integration into production lines.
Selection Notes
Select this component when low on-state resistance is required at logic-level gate drive voltages. The LFPAK33 package offers efficient thermal management for moderate current applications. Verify that the 100 V breakdown voltage aligns with system transient requirements. Consider the repetitive avalanche rating if the application involves inductive load switching without external clamping circuits.
Part Context
This part belongs to the Nexperia BUK9M series of N-channel MOSFETs designed for automotive use. The 'E' suffix indicates the LFPAK33 plastic surface-mounted package version. The device integrates TrenchMOS technology to achieve low conduction losses while maintaining robustness suitable for critical automotive electronic control units and power distribution networks.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout compatibility and thermal resistance values when replacing existing designs.
