ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：BUK9M16-100L/SOT1210/MLFPAK
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.05V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs：55.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3465 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：90.9W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
Download product information
Overview
The Nexperia BUK9M16-100LX is an N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 100 V and a continuous drain current of 45 A at 25 °C mounting base temperature. The typical on-state resistance is 12 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 90.9 W under specified conditions. The device supports junction temperatures up to 175 °C and includes side-wettable flanks for enhanced solder joint reliability.
Feature Summary
- Logic-level compatible with Trench12 MOSFET technology
- Automotive qualified to AEC-Q101 standard at 175 °C
- Efficient switching performance with soft body-diode recovery
- Side-wettable flanks designed for robust solder joints and automatic optical inspection
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- LED lighting
- Circuit protection
Procurement Notes
Verify the specific ordering suffix 'X' against official Nexperia documentation to confirm reel packaging specifications. Ensure the component matches the LFPAK33 package outline SOT1210. Confirm that the marking code corresponds to the expected production batch. Validate compliance with RoHS directives prior to integration into final assemblies.
Selection Notes
Select this component for high-performance automotive applications requiring low conduction losses. The logic-level gate drive compatibility simplifies interface design with standard microcontrollers. Consider the thermal resistance characteristics when designing PCB layouts for heat dissipation. Verify that the operating environment remains within the specified junction temperature limits for optimal reliability.
Part Context
This device belongs to Nexperia's portfolio of automotive-grade power MOSFETs. It utilizes advanced TrenchMOS technology to achieve high current density in a compact surface-mount package. The LFPAK33 form factor provides improved thermal performance compared to traditional plastic packages, supporting demanding power switching requirements in modern vehicle architectures.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal characteristics carefully. Ensure any replacement part meets the same AEC-Q101 qualification standards and package dimensions.
