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The BUK9M20-60ELX is a single N-channel logic level MOSFET in an LFPAK33 (SOT1210) package, utilizing Nexperia's Application Specific Enhanced SOA technology. It features a drain-source voltage of 60 V and a maximum continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 13 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 79.4 W at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific ordering suffix 'X' against the official datasheet to confirm reel packaging specifications. Ensure the component meets AEC-Q101 qualification requirements for your target automotive environment. Confirm that the LFPAK33 footprint matches your PCB design constraints before finalizing procurement orders.
Select this component when designing circuits requiring high surge current handling and robust linear mode operation under transient conditions. The low on-state resistance supports efficient power management in 12 V automotive architectures. Verify thermal design compatibility with the specified mounting base temperature ratings for optimal performance.
This part belongs to Nexperia's Application Specific Field Effect Transistor (ASFET) portfolio, tailored for optimized performance in defined use cases rather than general-purpose switching. It represents a transition from older DPAK packages to the modern LFPAK33 form factor, offering significant space savings while maintaining or improving electrical ruggedness for safety-critical automotive subsystems.
Direct replacements must match the LFPAK33 (SOT1210) package and 60 V rating. Verify that any substitute also possesses Enhanced SOA capabilities if linear mode operation is required. Check pinout compatibility and ensure the alternative meets AEC-Q101 automotive qualification standards.
Yes, the device is fully automotive qualified to AEC-Q101 standards and is designed for use in linear mode within airbag applications.
The peak drain current (IDM) is 208 A for pulses up to 10 µs at a mounting base temperature of 25 °C.