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Product Detailed Parameters
- Description：MOSFET N-CH 40V 30A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7.7 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：798 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：44W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The Nexperia BUK9M24-40EX is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 40 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 24 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 44 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 automotive standards for high-performance applications
- True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Repetitive avalanche rated for enhanced ruggedness
- Suitable for thermally demanding environments due to 175 °C rating
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix 'EX' against official Nexperia documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure that the LFPAK33 footprint matches the target PCB layout requirements. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's latest product database before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring low gate drive voltages, specifically where VGS levels around 5 V are standard. The logic level characteristic ensures efficient switching even with lower control signals. Consider the thermal resistance characteristics and the need for adequate mounting base cooling to maintain performance within the specified 175 °C junction temperature limit during operation.
Part Context
This device belongs to the BUK9M series of N-channel MOSFETs manufactured by Nexperia. It employs TrenchMOS technology to achieve low on-resistance within a compact surface-mount form factor. The LFPAK33 package provides robust thermal performance and mechanical reliability, making it suitable for space-constrained designs requiring high current handling capabilities in automotive and industrial environments.
Replacement Considerations
Consult official Nexperia cross-reference lists for verified substitutes. Potential alternatives within the same family include devices with similar voltage ratings and package types, such as the BUK9M14-40E or BUK9M40-40E, provided their electrical parameters meet the specific design requirements.
