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Product Detailed Parameters
- Description：MOSFET N-CH 60V 32A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：12.4 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1469 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：55W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The Nexperia BUK9M24-60EX is a logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK33 (SOT1210) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 32 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 24 mΩ at VGS = 5 V and ID = 10 A, with a total gate charge of 12.4 nC. Qualified to the AEC-Q101 standard, it supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities for robust automotive operation.
Feature Summary
- Qualified to AEC-Q101 standard for high-performance automotive applications
- Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Supports thermally demanding environments with a 175 °C junction temperature rating
- Rated for repetitive avalanche energy to enhance ruggedness in switching circuits
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure the component matches the required AEC-Q101 qualification status for your target application. Cross-reference the marking code 92460E with the datasheet to authenticate the part during incoming inspection. Confirm thermal management requirements align with the specified junction-to-mounting base thermal resistance values provided in the product data sheet.
Selection Notes
Select this component when designing circuits requiring low on-state resistance at logic-level gate voltages. The LFPAK33 package provides efficient thermal dissipation suitable for compact layouts. Consider the 60 V breakdown voltage and 32 A current capability for load switching tasks. Verify that the gate drive voltage meets the 5 V requirement for optimal RDS(on) performance. Evaluate the repetitive avalanche rating if the application involves inductive load switching scenarios.
Part Context
This device belongs to Nexperia's BUK9M series of N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low conduction losses. The LFPAK33 package offers a surface-mounted solution with a mounting base connected to the drain for improved heat transfer. This series is engineered to meet stringent automotive reliability standards while maintaining competitive electrical performance parameters.
Replacement Considerations
Consult the official Nexperia replacement guide for verified substitutes. Ensure any alternative maintains the LFPAK33 footprint and AEC-Q101 qualification. Verify that the substitute's RDS(on) and voltage ratings meet or exceed the original specifications.
