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The BUK9M24-80L is an N-channel logic level MOSFET utilizing Trench12 technology, housed in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 80 V and a continuous drain current of 35 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 23.6 mΩ at VGS = 10 V and 25 °C. Total power dissipation reaches 67 W under specified conditions. The component is qualified to the AEC-Q101 standard for automotive applications operating up to 175 °C junction temperature.
Verify that the specific ordering suffix matches the required tape and reel configuration, as packaging variations exist within the product family. Confirm the revision status of the datasheet against the most recent Nexperia publication to ensure alignment with current electrical specifications and marking codes before finalizing procurement orders.
Select this component when designing circuits requiring low on-state resistance at logic-level gate voltages within an 80 V system. The LFPAK33 package offers a compact footprint suitable for space-constrained PCB layouts while providing adequate thermal performance for automotive loads. Ensure the application operates within the specified 175 °C junction temperature limit to maintain reliability.
This device belongs to Nexperia's BUK9M series of power MOSFETs designed for automotive and industrial markets. The series leverages Trench12 technology to achieve improved figure-of-merit characteristics compared to previous generations. The LFPAK33 package is part of Nexperia's broader portfolio of surface-mount solutions optimized for high-current density and thermal efficiency.
BUK9M24-80LX