BUK9M60-100LX

BUK9M60-100LX

$0.58
  • Description:BUK9M60-100L/SOT1210/MLFPAK
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:aa2a7d802a5e Category: Brand:

  
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Product Detailed Parameters

  • Description:BUK9M60-100L/SOT1210/MLFPAK
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.05V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1023 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):50.4W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK33
  • Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M60-100LX

Overview

The BUK9M60-100L is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 100 V and a maximum continuous drain current of 19 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 45.9 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 50.4 W under specified conditions. Thermal resistance from junction to mounting base is typically 2.75 K/W. The component supports a junction temperature range up to 175 °C and includes avalanche ruggedness rated for non-repetitive energies.

Feature Summary

  • Logic level compatible gate drive characteristics
  • Trench 12 MOSFET technology with soft body-diode recovery
  • Qualified to AEC-Q101 standard for automotive applications
  • Side wettable flanks enabling robust solder joints and automated optical inspection

Applications

  • 12 V, 24 V and 48 V automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • LED lighting and circuit protection

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm that the LFPAK33 footprint matches the design requirements. Ensure the application environment stays within the qualified AEC-Q101 temperature ranges. Check for any recent product change notices regarding marking codes or thermal parameters before finalizing procurement.

Selection Notes

Select this component for high-performance automotive designs requiring logic-level gate drive compatibility. The LFPAK33 package offers efficient thermal management suitable for thermally demanding environments. Consider the 100 V rating and low on-state resistance for minimizing conduction losses in power switching applications. Verify PCB thermal design capabilities to support the demonstrated 19 A continuous current limits.

Part Context

This part belongs to the Nexperia BUK9M series of N-channel MOSFETs designed for automotive use. The series utilizes TrenchMOS technology to achieve low on-state resistance and efficient switching. These devices are specifically engineered to meet AEC-Q101 qualification standards, ensuring reliability in harsh automotive operating conditions compared to general-purpose industrial transistors.

Replacement Considerations

Direct substitutes include other Nexperia BUK9M series parts with similar voltage and current ratings, such as the BUK9M24-60E or BUK9M53-60EX, provided pinout and package dimensions match. Verify that alternative components meet the same AEC-Q101 qualification and thermal performance requirements.

BUK9M60-100LXBUK9M60-100LX
$0.58
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