BUK9M7R2-40EX

BUK9M7R2-40EX

$0.77
  • Description:MOSFET N-CH 40V 70A LFPAK33
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:678a47613e07 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 40V 70A LFPAK33
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:5.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:19.7 nC @ 5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:2567 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):79W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK33
  • Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M7R2-40EX

Overview

The BUK9M7R2-40EX is a logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK33 (SOT1210) package. It features a drain-source voltage of 40 V and a continuous drain current of 70 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 7.2 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 79 W under specified thermal conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Qualified for high performance automotive applications in accordance with the AEC Q101 standard.
  • Features true logic level gate operation with a threshold voltage greater than 0.5 V at elevated temperatures.
  • Designed for thermally demanding environments with a maximum junction temperature rating of 175 °C.

Applications

  • 12 V automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm tape and reel specifications. Ensure the requested part number matches the exact marking code and package variant required for your assembly process. Cross-reference the datasheet revision date to confirm the most recent electrical characteristics and thermal data are applied to your design.

Selection Notes

Select this component when low gate drive voltage compatibility is required alongside high current handling capabilities. The LFPAK33 package provides robust thermal performance suitable for surface mount applications. Consider the repetitive avalanche rating if the circuit topology involves inductive load switching or potential voltage spikes exceeding standard operating limits.

Part Context

This device belongs to the Nexperia BUK9M series of N-channel MOSFETs. It employs TrenchMOS technology to achieve low on-state resistance within a compact plastic surface-mounted package. The product line is engineered specifically for automotive reliability standards, offering a balance of electrical performance and thermal management for modern vehicle electronics.

Replacement Considerations

Direct substitutes include other Nexperia parts within the BUK9M series sharing the LFPA33 package and 40 V rating, such as the BUK9M6R7-40EX or BUK9M24-40EX. Verify that alternative candidates match the required on-state resistance and gate charge specifications to ensure equivalent switching performance and thermal behavior in the target application.

FAQ

What is the maximum gate-source voltage rating?

The DC gate-source voltage is rated at ±10 V, while the pulsed gate-source voltage can withstand up to ±15 V.

Is the device capable of handling avalanche events?

Yes, the BUK9M7R2-40EX is repetitively avalanche rated, allowing it to absorb non-repetitive drain-source avalanche energy under specified conditions.

BUK9M7R2-40EXBUK9M7R2-40EX
$0.77
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