BUK9M85-60EX

BUK9M85-60EX

$0.54
  • Description:MOSFET N-CH 60V 12.8A LFPAK33
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:8e52f1f14764 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 12.8A LFPAK33
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:12.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:73mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:4.4 nC @ 5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:434 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):31W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK33
  • Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M85-60EX

Overview

The BUK9M85-60EX is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) plastic surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 12.8 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 85 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 31 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Compliant with the AEC Q101 standard for automotive applications
  • Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
  • Rated for thermally demanding environments with a maximum junction temperature of 175 °C
  • Capable of handling repetitive avalanche energy events

Applications

  • 12 V automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Ensure the requested part number matches the exact marking code 98560E. Confirm compliance requirements including RoHS and REACH status directly from the manufacturer's latest product specification before finalizing procurement orders.

Selection Notes

Select this component for designs requiring low gate drive voltage compatibility alongside robust thermal performance. The LFPAK33 package provides efficient heat dissipation suitable for space-constrained PCB layouts. Verify that the required drain current and voltage ratings align with the system's operational limits and transient conditions to ensure reliable long-term operation within the specified temperature range.

Part Context

This device belongs to the Nexperia BUK9M series of N-channel logic level MOSFETs. These components are engineered using TrenchMOS technology to minimize conduction losses while maintaining fast switching speeds. The series is specifically qualified for automotive use, offering high reliability and ruggedness in harsh electrical and thermal environments typical of modern vehicle electronics.

Replacement Considerations

Direct substitutes include other Nexperia parts within the BUK9M series sharing the LFPAK33 package and similar electrical characteristics, such as the BUK9M19-60EX or BUK9M53-60EX. Cross-vendor replacements require careful verification of pinout compatibility, thermal resistance values, and avalanche ratings to ensure functional equivalence without circuit modification.

BUK9M85-60EXBUK9M85-60EX
$0.54
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