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Product Detailed Parameters
- Description：MOSFET 2N-CH 65V 13.6A 20SO
- Series：TrenchPLUS
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：65V
- Current - Continuous Drain (Id) @ 25°C：13.6A (Tc)
- Rds On (Max) @ Id, Vgs：12.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：40.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：3052pF @ 25V
- Power - Max：4.75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package：20-SO
- Grade：-
- Qualification：-
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Overview
The BUK9MFF-65PSS,518 is a P-channel power MOSFET manufactured by Nexperia USA Inc. It features a drain-source voltage (Vdss) of 65 V and a continuous drain current (Id) of 42 A at 25°C case temperature. The device utilizes LFPAK66 (SOT8043) surface-mount packaging to ensure robust thermal performance. Key electrical parameters include a maximum on-resistance (Rds(on)) of 7.5 mΩ at Vgs = -10 V. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.
Feature Summary
- Automotive-grade reliability with AEC-Q101 certification for demanding environments
- High current handling capability optimized for low-loss power switching applications
- Advanced LFPAK66 package design providing superior thermal dissipation and mechanical stability
Applications
- Motor control systems in automotive and industrial machinery
- Power supply modules requiring efficient high-side or low-side switching
- Battery management systems for electric vehicles and energy storage
Procurement Notes
Verify the specific suffix '518' against official Nexperia documentation to confirm tape-and-reel specifications and quantity per reel. Ensure compatibility with RoHS and REACH regulations for your target market. Cross-reference the full part number with authorized distributors to confirm current availability and lead times, as automotive components may have extended delivery windows.
Selection Notes
Select this component when designing circuits requiring a 65 V P-channel MOSFET with high current capacity. The LFPAK66 package is suitable for applications needing enhanced heat dissipation without increasing board footprint. Consider the Rds(on) value for efficiency calculations in power paths. Verify gate drive voltage requirements align with the specified threshold characteristics for optimal switching performance.
Part Context
This device belongs to Nexperia's automotive-grade power MOSFET portfolio, designed for high-reliability applications. The LFPAK66 package represents an evolution in surface-mount technology, offering improved thermal conductivity compared to traditional packages. It supports the industry trend toward higher integration and efficiency in electrified vehicle architectures.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Potential replacements must match the 65 V rating, P-channel configuration, and LFPAK66 footprint. Verify that any substitute maintains AEC-Q101 qualification if required for the application.
