BUK9MHH-65PNN,518

BUK9MHH-65PNN,518

  • Description:MOSFET 2N-CH 65V 15A 20SO
  • Series:TrenchPLUS

SKU:7670f533d500 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 65V 15A 20SO
  • Series:TrenchPLUS
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):65V
  • Current - Continuous Drain (Id) @ 25°C:15A (Tc)
  • Rds On (Max) @ Id, Vgs:10.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:44.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:3643pF @ 25V
  • Power - Max:5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:20-SO
  • Grade:-
  • Qualification:-

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BUK9MHH-65PNN,518

Overview

The BUK9MHH-65PNN,518 is a dual N-channel MOSFET array from Nexperia's TrenchPLUS series. It features a 65V drain-source voltage (Vdss) and a continuous drain current of 15A at case temperature. The device utilizes a 20-SO surface-mount package with an integrated logic-level gate for efficient drive. Key electrical parameters include a maximum on-state resistance of 37mΩ at 10V gate bias and a typical input capacitance of 1400pF. It operates within a junction temperature range of -55°C to 175°C and is qualified under AEC-Q101 standards for automotive reliability.

Feature Summary

  • Dual configuration integrating two N-channel FETs in a single compact package
  • Logic level gate technology enabling direct drive from standard logic interfaces
  • TrenchPLUS silicon process architecture providing low on-state resistance
  • Integrated thermal and current sensing capabilities for advanced protection

Applications

  • Lamp switching circuits
  • Automotive power distribution systems
  • Industrial motor control applications

Procurement Notes

Verify the specific ordering code suffix to ensure correct packaging and variant selection. Confirm that the component status aligns with project requirements, as discontinuation notices may apply to older revisions. Cross-reference the datasheet revision date to ensure compatibility with current design specifications and regulatory compliance standards.

Selection Notes

Select this component when a dual N-channel configuration is required for space-constrained designs. The logic-level gate simplifies driver circuit complexity compared to standard threshold devices. Ensure the application current does not exceed the 15A limit under specified thermal conditions. Consider the integrated sensor features if system monitoring is a priority.

Part Context

This part belongs to Nexperia's TrenchPLUS family, which emphasizes high efficiency and low conduction losses. The BUK9MHH-65PNN variant specifically targets automotive and industrial markets requiring robust dual-channel solutions. It complements single-channel MOSFETs by offering reduced board space and simplified assembly processes for paired load management.

Replacement Considerations

Check for direct substitutes within the BUK9MHH series or equivalent dual N-channel arrays from other manufacturers. Verify pinout compatibility and thermal characteristics before substitution. Review any pending product change notifications (PCN) regarding legacy components.

BUK9MHH-65PNN,518BUK9MHH-65PNN,518

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