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The BUK9MHH-65PNN,518 is a dual N-channel MOSFET array from Nexperia's TrenchPLUS series. It features a 65V drain-source voltage (Vdss) and a continuous drain current of 15A at case temperature. The device utilizes a 20-SO surface-mount package with an integrated logic-level gate for efficient drive. Key electrical parameters include a maximum on-state resistance of 37mΩ at 10V gate bias and a typical input capacitance of 1400pF. It operates within a junction temperature range of -55°C to 175°C and is qualified under AEC-Q101 standards for automotive reliability.
Verify the specific ordering code suffix to ensure correct packaging and variant selection. Confirm that the component status aligns with project requirements, as discontinuation notices may apply to older revisions. Cross-reference the datasheet revision date to ensure compatibility with current design specifications and regulatory compliance standards.
Select this component when a dual N-channel configuration is required for space-constrained designs. The logic-level gate simplifies driver circuit complexity compared to standard threshold devices. Ensure the application current does not exceed the 15A limit under specified thermal conditions. Consider the integrated sensor features if system monitoring is a priority.
This part belongs to Nexperia's TrenchPLUS family, which emphasizes high efficiency and low conduction losses. The BUK9MHH-65PNN variant specifically targets automotive and industrial markets requiring robust dual-channel solutions. It complements single-channel MOSFETs by offering reduced board space and simplified assembly processes for paired load management.
Check for direct substitutes within the BUK9MHH series or equivalent dual N-channel arrays from other manufacturers. Verify pinout compatibility and thermal characteristics before substitution. Review any pending product change notifications (PCN) regarding legacy components.