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Product Detailed Parameters
- Description：55V N CH TRENCHFET
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BUK9MMM-55PNN/A,51 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes advanced trench technology to achieve low on-state resistance and reduced gate charge compared to conventional planar devices. The component is designed for efficient power switching in automotive and general-purpose applications. It features a D2PAK-7 package suitable for surface mount installation. The device is qualified to AEC-Q101 standards for use in critical automotive systems.
Feature Summary
- Utilizes Nexperia's TrenchMOS technology to achieve lower gate charge and reduced output capacitance compared to conventional planar trench structures.
- Designed as a logic level FET, allowing direct drive from standard logic sources without additional gate drivers.
- Qualified to AEC-Q101 standards, ensuring reliability for use in automotive critical applications.
Applications
- Automotive critical applications requiring high reliability
- General purpose power switching
- Motor control circuits
Procurement Notes
Verify the specific suffix /A,51 against official Nexperia documentation to confirm current production status. Cross-reference with discontinuation notices, as related variants have faced end-of-life notifications. Ensure compatibility with D2PAK-7 footprint requirements during procurement planning.
Selection Notes
Select this component when low conduction losses and logic-level gate drive capability are required in automotive environments. The TrenchMOS technology offers improved switching performance over planar alternatives. Verify thermal management requirements for the D2PAK-7 package based on specific load conditions.
Part Context
This part belongs to Nexperia's BUK9 series of N-channel MOSFETs. The series is characterized by the use of TrenchMOS technology for enhanced efficiency. These devices are widely used in power management solutions where size and thermal performance are critical constraints.
Replacement Considerations
Official substitutes include BUK9MRR-55PGG/A,51. Verify pinout and electrical specifications against datasheets before substitution. Check for any active discontinuation notices affecting availability or long-term supply.
