BUK9MNN-65PKK,518

BUK9MNN-65PKK,518

  • Description:MOSFET 2N-CH 65V 7.1A 20SO
  • Series:TrenchPLUS

SKU:08b16404a82c Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 65V 7.1A 20SO
  • Series:TrenchPLUS
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):65V
  • Current - Continuous Drain (Id) @ 25°C:7.1A (Tc)
  • Rds On (Max) @ Id, Vgs:32.8mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1180pF @ 25V
  • Power - Max:3.57W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:20-SO
  • Grade:-
  • Qualification:-

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BUK9MNN-65PKK,518

Overview

The BUK9MNN-65PKK,518 is an N-channel TrenchMOS logic level field-effect transistor manufactured by Nexperia. It utilizes advanced TrenchMOS technology to achieve low on-state resistance, resulting in reduced conduction losses and improved energy efficiency. The device is designed for robust performance in thermally demanding environments and supports logic-level gate drive sources directly. Its construction ensures high reliability and suitability for general-purpose power switching applications requiring efficient control of electrical loads.

Feature Summary

  • Low conduction losses due to optimized on-state resistance
  • Suitable for logic level gate drive sources
  • Designed for operation in thermally demanding environments

Applications

  • Automotive systems
  • General purpose power switching
  • Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering code suffix against official Nexperia documentation to confirm package type and reel specifications. Ensure compatibility with AEC-Q101 standards if automotive qualification is required for your design. Cross-reference thermal management requirements with the datasheet to ensure adequate heat dissipation solutions are implemented for the intended operating conditions.

Selection Notes

Select this component when low on-state resistance is critical for minimizing power loss in switching applications. Consider its suitability for logic-level driving interfaces where direct connection to standard logic outputs is necessary. Evaluate the thermal performance characteristics against the expected ambient temperature and load current to ensure reliable operation within the specified junction temperature limits.

Part Context

This part belongs to Nexperia's portfolio of N-channel enhancement mode field-effect transistors. It leverages TrenchMOS technology to deliver high-performance switching capabilities in a compact plastic package. The product line is engineered to meet the rigorous demands of modern electronic designs, offering a balance of electrical performance and thermal stability for various industrial and consumer applications.

Replacement Considerations

Consult official Nexperia substitution guides or contact technical support for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal characteristics through official documentation.

FAQ

Is the BUK9MNN-65PKK,518 suitable for automotive applications?

Yes, the product family is designed and qualified to appropriate AEC standards for use in automotive critical applications.

What technology does this MOSFET utilize?

It uses Nexperia's TrenchMOS technology, which contributes to its low on-state resistance and efficient switching performance.

Can this device be driven directly by logic levels?

Yes, it is suitable for logic level gate drive sources, allowing direct interfacing with standard logic outputs.

BUK9MNN-65PKK,518BUK9MNN-65PKK,518

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