ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：55V N CH TRENCHFET
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK9MRR-55PGG/A,51 is an N-channel TrenchMOS logic level field-effect transistor manufactured by Nexperia. It utilizes enhancement mode technology within a plastic package designed for surface-mount applications. The device features low on-state resistance to minimize conduction losses and supports logic-level gate drive sources. It is engineered for high efficiency with reduced switching and conduction losses, suitable for industrial and communications environments.
Feature Summary
- Low conduction losses due to optimized on-state resistance
- Suitable for logic level gate drive sources
- High efficiency from low switching and conduction losses
Applications
- Class-D amplifiers
- DC-to-DC converters
- Motor control
- Server power supplies
Procurement Notes
Verify the specific suffix 'A,51' against official Nexperia documentation to confirm tape-and-reel packaging details and exact marking codes. Ensure the component matches the standard BUK9MRR-55PGG electrical specifications. Confirm RoHS compliance status through current datasheets before integration into production designs.
Selection Notes
Select this component for designs requiring efficient power switching in compact form factors. The logic level gate drive capability simplifies interface requirements with standard digital controllers. Consider thermal management solutions appropriate for the target application environment to maintain performance reliability under load conditions.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode MOSFETs. These devices are characterized by low on-resistance and fast switching speeds. The series targets applications demanding high efficiency and reliable operation in power conversion and amplification circuits across industrial and consumer sectors.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters such as Vds, Id, and Rds(on) when evaluating alternative components. Ensure any substitute meets the same thermal and voltage ratings required by the original design.
