BUK9MRR-65PKK,518

BUK9MRR-65PKK,518

  • Description:MOSFET 2N-CH 65V 4.8A 20SO
  • Series:TrenchPLUS

SKU:ae795892dd34 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 65V 4.8A 20SO
  • Series:TrenchPLUS
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):65V
  • Current - Continuous Drain (Id) @ 25°C:4.8A (Tc)
  • Rds On (Max) @ Id, Vgs:60.7mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:712pF @ 25V
  • Power - Max:3.2W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:20-SO
  • Grade:-
  • Qualification:-

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BUK9MRR-65PKK,518

Overview

The BUK9MRR-65PKK,518 is an N-channel PowerTrench MOSFET manufactured by Nexperia USA Inc. It features a 65 V drain-source voltage rating and a continuous drain current of 42 A at 25 °C. The device exhibits a maximum on-state resistance (Rds(on)) of 13 mΩ at a gate-source voltage of 10 V. Packaged in the LFPAK33 (SOT8002-3) surface-mount housing, it supports a power dissipation of 75 W and operates within a junction temperature range of -55 °C to +175 °C. This component utilizes TrenchMOS technology for optimized switching performance.

Feature Summary

  • Utilizes advanced TrenchMOS technology to achieve low conduction losses and high efficiency.
  • Designed with enhanced thermal performance capabilities suitable for demanding environments.
  • Features true logic-level gate drive compatibility for direct interface with standard control signals.

Applications

  • Automotive motor control systems
  • DC-DC converter circuits
  • Load switching applications

Procurement Notes

Verify the specific suffix '518' against official Nexperia documentation to confirm packaging details and reel specifications. Ensure that the requested quantity aligns with manufacturer minimum order requirements and lead times. Cross-reference the full part number with authorized distributors to guarantee authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when a robust N-channel solution is required for 65 V automotive or industrial environments. The LFPAK33 package offers superior thermal management compared to traditional SMD packages. Consider the 13 mΩ Rds(on) for minimizing power loss in high-current paths where space constraints limit larger footprint options.

Part Context

This device belongs to the Nexperia BUK9M series, which focuses on high-performance N-channel MOSFETs for automotive and general-purpose applications. The series leverages TrenchMOS technology to deliver low on-resistance and fast switching speeds. These components are engineered to meet stringent reliability standards required for modern electronic systems.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Generic equivalents may not match the specific thermal characteristics or AEC-Q101 compliance of the original component.

FAQ

What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature is +175 °C.

Does this component support logic-level gate drive?

Yes, the device is designed as a true logic-level MOSFET compatible with standard logic voltages.

BUK9MRR-65PKK,518BUK9MRR-65PKK,518

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