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The BUK9MRR-65PKK,518 is an N-channel PowerTrench MOSFET manufactured by Nexperia USA Inc. It features a 65 V drain-source voltage rating and a continuous drain current of 42 A at 25 °C. The device exhibits a maximum on-state resistance (Rds(on)) of 13 mΩ at a gate-source voltage of 10 V. Packaged in the LFPAK33 (SOT8002-3) surface-mount housing, it supports a power dissipation of 75 W and operates within a junction temperature range of -55 °C to +175 °C. This component utilizes TrenchMOS technology for optimized switching performance.
Verify the specific suffix '518' against official Nexperia documentation to confirm packaging details and reel specifications. Ensure that the requested quantity aligns with manufacturer minimum order requirements and lead times. Cross-reference the full part number with authorized distributors to guarantee authenticity and traceability before finalizing procurement orders.
Select this component when a robust N-channel solution is required for 65 V automotive or industrial environments. The LFPAK33 package offers superior thermal management compared to traditional SMD packages. Consider the 13 mΩ Rds(on) for minimizing power loss in high-current paths where space constraints limit larger footprint options.
This device belongs to the Nexperia BUK9M series, which focuses on high-performance N-channel MOSFETs for automotive and general-purpose applications. The series leverages TrenchMOS technology to deliver low on-resistance and fast switching speeds. These components are engineered to meet stringent reliability standards required for modern electronic systems.
Consult official Nexperia substitution guides for verified alternatives. Generic equivalents may not match the specific thermal characteristics or AEC-Q101 compliance of the original component.
The maximum operating junction temperature is +175 °C.
Yes, the device is designed as a true logic-level MOSFET compatible with standard logic voltages.