BUK9MTT-65PBB,518

Description：MOSFET 2N-CH 65V 3.8A 20SO
Series：TrenchPLUS

SKU:8afddce0d24d Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 65V 3.8A 20SO
Series：TrenchPLUS
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：65V
Current - Continuous Drain (Id) @ 25°C：3.8A (Tc)
Rds On (Max) @ Id, Vgs：90.4mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：535pF @ 25V
Power - Max：3.15W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：20-SOIC (0.295", 7.50mm Width)
Supplier Device Package：20-SO
Grade：-
Qualification：-

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BUK9MTT-65PBB,518

Overview

The BUK9MTT-65PBB,518 is a dual N-channel MOSFET from Nexperia's TrenchPLUS series. It features a 65V drain-source voltage rating and operates in an SO-20 package. The device utilizes logic-level gate technology for efficient switching. Key electrical characteristics include a maximum on-resistance of 37 milliohms per channel at Vgs=4.5V. It supports continuous drain currents up to 15A per channel. The component is designed for automotive applications, ensuring robust performance under varying thermal conditions.

Feature Summary

Dual N-channel configuration within a single compact package
Logic-level gate drive capability for direct microcontroller interfacing
Automotive-grade reliability with high surge current handling

Applications

Automotive power distribution units
Battery management systems in electric vehicles
High-side and low-side load switches

Procurement Notes

Verify the specific suffix '518' corresponds to the required tape and reel packaging format. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure that the SO-20 footprint matches the target PCB design constraints. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing specifications.

Selection Notes

Select this component when dual independent N-channel control is required in space-constrained automotive designs. The low Rds(on) minimizes conduction losses in high-current paths. Logic-level operation simplifies gate driver circuitry requirements. Evaluate thermal dissipation capabilities against the specific application's duty cycle and ambient temperature profiles.

Part Context

This part belongs to Nexperia's TrenchPLUS family, which employs advanced trench gate technology to reduce on-resistance while maintaining high breakdown voltage. The series is optimized for automotive electronics, offering improved efficiency compared to standard planar MOSFETs. The dual configuration allows for synchronized switching operations in bridge or parallel configurations.