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Product Detailed Parameters
- Description：TRANS N-CH LFPAK
- Series：*
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
BUK9Y11-30B/C1,115 is a dual N-channel TrenchMOS logic level MOSFET manufactured by Nexperia USA Inc. It features a 30 V drain-source voltage rating and a low on-resistance of 2.8 mΩ at 10 V gate drive. The device supports a continuous drain current of 140 A at case temperature and dissipates up to 260 W. Packaged in an LFPAK56 (Power-SO8) surface-mount housing, it operates within a junction temperature range of -55 °C to +175 °C and holds AEC-Q101 automotive qualification.
Feature Summary
- Dual N-channel configuration for efficient power switching
- Low on-resistance optimized for high-current applications
- Automotive-grade reliability with AEC-Q101 certification
Applications
- Motorcycle Engine Control Unit (ECU)
- Small Engine Control Systems
- General Automotive Power Switching
Procurement Notes
Verify the manufacturer designation as Nexperia USA Inc. when sourcing this component. Confirm the specific ordering code BUK9Y11-30B/C1,115 matches the required LFPAK56 package and automotive grade specifications. Ensure compatibility with existing design constraints regarding thermal management and gate drive requirements before finalizing procurement.
Selection Notes
Select this component for applications requiring robust dual-channel switching with minimal conduction losses. The 30 V rating suits low-voltage automotive systems. Consider the 140 A current capability and 260 W power dissipation for thermal design. The LFPAK56 package offers a compact footprint suitable for space-constrained PCB layouts in modern electronic control units.
Part Context
This MOSFET belongs to the BUK9Y series of TrenchMOS devices designed for automotive environments. It complements other NXP and Nexperia components used in engine control and power management circuits. The part is engineered to meet stringent automotive standards for durability and performance under varying thermal conditions.
Replacement Considerations
Consult official substitution lists for equivalent dual N-channel MOSFETs with matching 30 V ratings and LFPAK56 packaging. Verify that any alternative device meets the same AEC-Q101 qualification and electrical characteristics to ensure system compatibility.
