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Product Detailed Parameters
- Description：MOSFET N-CH 100V 85A LFPAK56
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：7973 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：238W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y12-100E,115 is an N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 85 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 12 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 238 W under specified conditions. Thermal resistance from junction to mounting base is 0.63 K/W. The component supports a junction temperature range up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC Q101 standard for high-performance automotive applications
- True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Suitable for thermally demanding environments due to 175 °C rating
- Repetitive avalanche rated for robust performance
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring low conduction losses and high current handling in automotive contexts. The LFPAK56 package provides efficient thermal management via the exposed mounting base. Ensure gate drive circuits support the logic level requirements, particularly at elevated temperatures where threshold voltage characteristics remain stable above 0.5 V.
Part Context
This part belongs to Nexperia's BUK9Y series of N-channel TrenchMOS logic level MOSFETs. These devices are engineered for automotive reliability and efficiency. The LFPAK56 package variant offers a compact surface-mount solution suitable for space-constrained PCB layouts while maintaining high power dissipation capabilities through direct thermal coupling to the board.
Replacement Considerations
Consult official Nexperia documentation for qualified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, package type, and thermal characteristics to ensure functional equivalence in existing designs.
