BUK9Y12-55B,115

Description：MOSFET N-CH 55V 61.8A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:a3ecc16636c4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 61.8A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：61.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：2880 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：106W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y12-55B,115

Overview

The BUK9Y12-55B,115 is an N-channel TrenchMOS logic level FET designed for automotive critical applications. It features a drain-source voltage (VDS) of 55 V and a continuous drain current (ID) of 61.8 A at 25 °C mounting base temperature. The device exhibits low on-state resistance (RDSon), typically 8.1 mΩ at VGS=10V and ID=20A. Total power dissipation reaches 106 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings of 129 mJ.

Feature Summary

Logic level gate drive compatibility enables direct control from standard logic sources.
Qualified to AEC-Q101 standards for reliability in automotive environments.
Enhanced thermal performance allows operation in demanding conditions up to 175 °C.

Applications

12 V and 24 V load switching
Advanced braking systems (ABS)
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring high current handling in compact packages. The logic level threshold simplifies driver design by allowing operation with lower gate voltages compared to standard MOSFETs. Ensure thermal management strategies account for the mounting base connection to maximize heat dissipation capabilities within the specified temperature limits.

Part Context

This part belongs to Nexperia's BUK9Y series of N-channel TrenchMOS logic level FETs. These devices utilize advanced trench technology to achieve low on-resistance and fast switching speeds. The series is specifically engineered to meet the rigorous quality and reliability requirements of modern automotive electronics, offering a robust solution for power management tasks.

Replacement Considerations

Check pinout compatibility and electrical parameters against alternatives like the BUK9Y19-55B/C2,115. Note that the latter is marked as obsolete. Verify package dimensions and thermal characteristics to ensure mechanical fit and adequate heat transfer in the existing design.