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Product Detailed Parameters
- Description：MOSFET N-CH 75V 48.2A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：48.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：3096 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：106W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y19-75B,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 75 V and a continuous drain current of 48.2 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 15.9 mΩ at VGS=5V and 18 mΩ at VGS=10V with ID=20A. Total power dissipation reaches 106 W at 25 °C. It operates within a junction temperature range of -55 °C to 175 °C and includes avalanche ruggedness with non-repetitive energy handling of 121 mJ.
Feature Summary
- Logic level gate drive compatibility for direct interface with standard control sources
- Automotive qualification compliant with AEC-Q101 standards for critical applications
- High thermal performance supporting operation in demanding environments up to 175 °C
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- DC-to-DC converters
- Engine management
- Transmission control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when low conduction losses are required in automotive or general power switching applications. The logic level threshold allows efficient driving from standard logic sources without additional gate drivers. Ensure the design accounts for the thermal resistance characteristics and safe operating area limits defined in the datasheet figures for high-current pulsed operations.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode FETs. It is housed in the LFPAK (SOT669) plastic surface-mounted package, which provides a robust mounting base connected to the drain for improved thermal dissipation. The device is designed specifically for automotive critical applications requiring high reliability and ruggedness.
Replacement Considerations
Check pinout compatibility and electrical parameters against alternatives. Verify that any substitute maintains the same SOT669 package dimensions and thermal characteristics to ensure fitment and performance equivalence in existing designs.
