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The Nexperia BUK9Y1R6-40HX is an N-channel logic level MOSFET utilizing Trench 9 superjunction technology, housed in a LFPAK56 (SOT669) package. It features a drain-source voltage of 40 V and a maximum continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 1.23 mΩ at VGS = 10 V and ID = 25 A. Total gate charge is typically 77 nC. It supports junction temperatures up to 175 °C and total power dissipation of 294 W.
Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component meets AEC-Q101 qualification requirements for your target automotive application. Ensure the design accounts for the 175 °C junction temperature rating and appropriate PCB thermal management for the LFPAK56 package.
Select this component for designs requiring low on-state resistance within a compact surface-mount footprint. The logic-level gate drive compatibility simplifies driver circuit design. Consider the tight threshold voltage limits if paralleling multiple devices is necessary for higher current handling.
This part belongs to Nexperia's BUK9Y series of automotive-grade N-channel MOSFETs. It utilizes the LFPAK56 package, also known as Power-SO8, which integrates a copper clip for superior thermal performance. The series is designed for robust operation in thermally demanding environments.
BUK9Y1R6-40H