BUK9Y22-100E,115

$1.56

Description：MOSFET N-CH 100V 49A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c6b4855c4c5b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 49A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：21.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：35.8 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：4640 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：147W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y22-100E,115

Overview

The Nexperia BUK9Y22-100E is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 100 V and a maximum continuous drain current of 49 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 22 mΩ at VGS = 5 V and ID = 15 A. Total power dissipation reaches 147 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities for robust operation.

Feature Summary

Qualified to AEC-Q101 standard for high performance automotive applications
Features true logic level gate with threshold voltage greater than 0.5 V at 175 °C
Repetitive avalanche rated for enhanced ruggedness
Suitable for thermally demanding environments due to 175 °C rating

Applications

12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Ensure the part number matches the required automotive qualification standards. Confirm thermal management requirements align with the specified mounting base temperature limits. Check for any recent product status updates or longevity program notices from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for designs requiring low on-state resistance and logic level gate drive compatibility in automotive environments. The LFPAK56 package offers efficient thermal dissipation suitable for high-power applications. Consider the repetitive avalanche rating when designing circuits prone to inductive load switching. Verify that the gate-source voltage requirements align with the system's logic levels, particularly at elevated junction temperatures.

Part Context

This device belongs to Nexperia's portfolio of TrenchMOS technology products designed for automotive use. It is housed in the SOT669 package variant known as LFPAK56. The marking code for identification is 92210E. The product data sheet was released on 7 November 2016, establishing the baseline specifications for this specific N-channel enhancement mode field-effect transistor.