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Product Detailed Parameters
- Description：MOSFET N-CH 80V 37A LFPAK56
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：27mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：17.1 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2703 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y25-80E,115 is an N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56 (SOT669) package. It features a drain-source voltage of 80 V and a continuous drain current of 37 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 27 mΩ at VGS = 5 V and 25 °C. Total power dissipation reaches 95 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified for high performance automotive applications with AEC-Q101 compliance
- Capable of operation in thermally demanding environments due to 175 °C rating
- Features true logic level gate characteristics with threshold voltage greater than 0.5 V at 175 °C
- Includes repetitive avalanche rating for robustness
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring low on-state resistance at standard logic gate drive levels. The LFPAK56 package provides efficient thermal management for high current applications. Ensure the circuit design accounts for the 175 °C maximum junction temperature and utilizes appropriate heat sinking to maintain performance within the safe operating area defined in the datasheet.
Part Context
This part belongs to Nexperia's BUK9Y series of N-channel MOSFETs designed for automotive use. The series employs TrenchMOS technology to achieve low RDS(on) and fast switching speeds. The LFPAK56 package is a plastic single-ended surface-mounted option offering improved thermal performance compared to traditional packages, suitable for space-constrained automotive PCB layouts.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pin compatibility or generic electrical parameters without confirming package dimensions and thermal characteristics match the original design requirements.
