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Product Detailed Parameters
- Description：MOSFET N-CH 40V 25A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：664 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：37W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y29-40E is a logic level N-channel MOSFET in an LFPAK56 (Power SO8) package utilizing TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 25 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 29 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 37 W under standard thermal conditions, with a junction temperature range spanning from -55 °C to +175 °C.
Feature Summary
- Qualified for high performance automotive applications in compliance with the AEC-Q101 standard.
- Capable of operation in thermally demanding environments due to a 175 °C junction temperature rating.
- Features true logic level gate drive characteristics with a threshold voltage greater than 0.5 V at elevated temperatures.
- Rated for repetitive avalanche energy operations.
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust automotive-grade reliability alongside efficient logic-level gate drive compatibility. The LFPAK56 package provides effective thermal management for high-current applications. Ensure that the gate drive voltage meets the minimum requirements to achieve the specified low on-state resistance values during operation.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. These devices are engineered using advanced trench gate technology to deliver superior electrical performance compared to planar structures. The product line is specifically designed to meet the rigorous qualification standards required for critical automotive electronic systems.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers within the same series or equivalent specifications.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The device can withstand a non-repetitive drain-source avalanche energy of 8.77 mJ under specific test conditions including an initial junction temperature of 25 °C.
How does the gate-source threshold voltage behave at high temperatures?
The gate-source threshold voltage remains above 0.5 V even at a junction temperature of 175 °C, ensuring reliable turn-on characteristics in high-temperature environments.
