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Product Detailed Parameters
- Description：MOSFET
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK9Y3R0-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device features a typical on-state resistance of 2.47 mΩ at VGS = 5 V and ID = 25 A. It supports a total power dissipation of 194 W and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Rated for repetitive avalanche energy operation
- Maintains true logic level gate functionality with threshold voltage greater than 0.5 V at 175 °C
- Engineered for thermally demanding environments with a 175 °C rating
Applications
- 12 V Automotive systems
- Motors, lighting and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Ensure the component version matches the required automotive grade specifications. Cross-reference the marking code '93E040' with the datasheet to authenticate the part number during receipt inspection.
Selection Notes
Select this component for designs requiring low on-state resistance and high current handling in compact surface-mount packages. The logic level gate drive capability allows direct interfacing with standard microcontrollers without additional level shifting circuitry. Consider the thermal resistance characteristics when designing heat dissipation paths for high-power applications.
Part Context
This device belongs to the Nexperia BUK9Y series of N-channel MOSFETs. It employs TrenchMOS technology to achieve enhanced performance metrics compared to conventional planar devices. The LFPAK56 package provides a robust mechanical structure with a mounting base connected to the drain for efficient thermal management.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Ensure any replacement maintains compatibility with the LFPAK56 footprint and meets the same AEC-Q101 automotive qualification requirements.
