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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：35.5 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：5962 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：194W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The Nexperia BUK9Y3R0-40E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 2.47 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 194 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 standard for high performance automotive applications
- True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Repetitive avalanche rated for robustness in demanding environments
- Suitable for thermally demanding operations due to 175 °C junction temperature rating
Applications
- 12 V Automotive systems
- Motors, lighting and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring low conduction losses and true logic level drive compatibility. The LFPAK56 package provides efficient thermal management for high current applications. Ensure gate drive voltages align with the logic level specifications to maintain optimal on-state resistance characteristics during operation.
Part Context
This part belongs to the Nexperia BUK9Y series of N-channel TrenchMOS logic level MOSFETs. These devices are engineered for automotive-grade reliability and high-performance power switching. The series utilizes advanced trench technology to achieve low on-resistance within compact surface-mount packages suitable for dense PCB layouts.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, package dimensions, and electrical characteristics to ensure functional equivalence in the target application.
