BUK9Y3R5-40E,115

$1.22

Description：MOSFET N-CH 40V 100A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e5b6370f7221 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：30.2 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：5137 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y3R5-40E,115

Overview

The BUK9Y3R5-40E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8/SOT669) package. It features a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 3.8 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 167 W under specified thermal conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Qualified for high-performance automotive applications according to the AEC-Q101 standard.
Capable of operation in thermally demanding environments with a maximum junction temperature rating of 175 °C.
Features a true logic level gate structure ensuring reliable switching performance at low gate-source voltages.

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability combined with efficient logic-level drive compatibility. The LFPAK56 package provides superior thermal management compared to traditional plastic packages, supporting higher current densities. Ensure the gate driver can supply sufficient voltage to fully enhance the channel while respecting the absolute maximum ratings for transient events.

Part Context

This part belongs to Nexperia's TrenchMOS family of standard and logic level MOSFETs designed for power switching applications. The BUK9Y series specifically targets automotive markets, offering enhanced ruggedness through repetitive avalanche capability. These devices are engineered to replace older generation MOSFETs in space-constrained designs where thermal efficiency and switching speed are critical performance factors.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet specifications.