BUK9Y43-60E,115

Overview

The BUK9Y43-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8/SOT669) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 22 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 35.8 mΩ at VGS = 5 V and ID = 5 A, with a maximum rating of 43 mΩ. Total power dissipation reaches 45 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Compliant with AEC-Q101 automotive qualification standards for high-performance applications.
• Features true logic level gate operation with threshold voltage maintained above 0.5 V at 175 °C.
• Rated for repetitive avalanche energy to withstand demanding switching environments.
• Designed for thermally demanding operations with a maximum junction temperature rating of 175 °C.

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component meets the necessary RoHS and REACH compliance requirements for your region. Ensure the design accounts for the thermal resistance from junction to mounting base when calculating heat dissipation. Cross-reference the marking code 94360E for physical identification during assembly inspection.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high thermal stability. The logic level gate drive allows direct interfacing with standard microcontrollers without additional level shifting circuitry. Consider the 43 mΩ maximum RDS(on) for efficiency calculations in low-voltage, high-current paths. Verify that the peak pulsed drain current capability aligns with the application's transient load requirements.

Part Context

This part belongs to Nexperia's BUK9Y series of N-channel MOSFETs, specifically engineered for automotive use. The LFPAK56 package provides efficient thermal transfer through a dedicated mounting base connected to the drain. The series utilizes TrenchMOS technology to achieve low conduction losses while maintaining high ruggedness against electrical overstress events common in vehicle electronics.

Replacement Considerations

BUK9Y43-60EX