ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：26.8 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：4077 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：147W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
Download product information
Overview
The BUK9Y4R4-40E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 4.4 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 147 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified for high performance automotive applications in compliance with the AEC-Q101 standard.
- Features true logic level gate drive capability with a threshold voltage greater than 0.5 V at 175 °C.
- Designed for thermally demanding environments with a maximum junction temperature rating of 175 °C.
- Incorporates repetitive avalanche rating for enhanced ruggedness in switching applications.
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when low conduction losses are required in automotive or industrial power switching designs. The logic level gate drive allows direct interfacing with standard microcontrollers without additional level shifting circuitry. Ensure thermal management strategies account for the 175 °C junction limit and the thermal resistance from junction to mounting base.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. It is housed in the SOT669 (LFPAK56) surface-mount package, which provides a robust mechanical structure and efficient heat dissipation through a large mounting base connected to the drain terminal.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pinout compatibility; verify electrical parameters including RDS(on), VGS(th), and package dimensions against the original specification sheet.
FAQ
What is the maximum gate-source voltage rating?
The DC gate-source voltage rating is ±10 V, while the pulsed rating extends to ±15 V.
How does the threshold voltage behave at high temperatures?
The device maintains a true logic level gate with a VGS(th) rating of greater than 0.5 V even at a junction temperature of 175 °C.
