BUK9Y4R8-60E,115

$1.44

Description：MOSFET N-CH 60V 100A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1b1223f37eb3 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：4.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：7853 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：238W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y4R8-60E,115

Overview

The BUK9Y4R8-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It is designed and qualified to the AEC-Q101 standard for high-performance automotive applications. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 100 A at 25 °C mounting base temperature, and a maximum total power dissipation of 238 W. The device features a typical drain-source on-state resistance of 3.3 mΩ at VGS = 5 V and ID = 25 A. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Repetitive avalanche rated for robust performance
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating greater than 0.5 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance and power dissipation limits under actual operating conditions.

Selection Notes

Select this component when a low on-resistance logic level N-channel MOSFET is required for 12 V automotive circuits. The LFPAK56 package provides efficient thermal transfer suitable for high-current applications. Consider the 175 °C junction temperature capability for operation in harsh thermal environments. Verify that the gate drive voltage aligns with the true logic level characteristics for optimal switching performance.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs. It is specifically engineered for automotive use, adhering to AEC-Q101 standards. The LFPAK56 package offers a compact surface-mount solution with a dedicated mounting base connected to the drain for improved heat dissipation compared to standard plastic packages.

Replacement Considerations

Check pinout compatibility and package dimensions against potential substitutes. Verify that alternative components meet or exceed the 60 V drain-source voltage and 100 A continuous current ratings. Ensure replacement parts also satisfy AEC-Q101 automotive qualification if required by the design.