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Product Detailed Parameters
- Description：MOSFET N-CH 75V 20.73A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：20.73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：53mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10.7 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1137 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：60.4W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y58-75B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 75 V and a continuous drain current of 20.73 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 58 mΩ at VGS=5V and 10A, or 53 mΩ at VGS=10V and 10A. Total power dissipation reaches 60.4 W at 25 °C. It supports junction temperatures up to 175 °C and includes an integrated source-drain diode with a reverse recovery time of 53 ns.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Compatible with logic level gate drive sources
- Qualified for automotive critical applications per AEC-Q101 standards
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- DC-to-DC converters
- General purpose power switching
- Solenoid drives
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape/reel specifications. Confirm that the component status remains active for production use. Ensure design compliance with absolute maximum ratings, particularly regarding repetitive avalanche energy limits and thermal resistance constraints under intended operating conditions.
Selection Notes
Select this component when low conduction loss and logic-level gate compatibility are required in automotive or industrial settings. The LFPAK package provides efficient thermal management for high-power dissipation needs. Evaluate the 75 V breakdown voltage and 20.73 A current capability against circuit requirements. Consider the 175 °C junction temperature rating for high-temperature operational environments.
Part Context
This part belongs to the Nexperia BUK9Y series of N-channel TrenchMOS FETs designed for automotive applications. It utilizes plastic surface-mounted packaging (SOT669/LFPAK) to balance electrical performance with thermal efficiency. The series targets general-purpose power switching where robustness and low on-resistance are critical for system efficiency.
Replacement Considerations
Check for direct substitutes within the BUK9Y family sharing identical pinouts and electrical parameters. Verify package compatibility and thermal characteristics before substitution. Consult official Nexperia cross-reference lists for validated alternatives.
