BUK9Y65-100E,115

$0.47

Description：MOSFET N-CH 100V 19A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3d0bf21733cc Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 19A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：63.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1523 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：64W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y65-100E,115

Overview

The BUK9Y65-100E is an N-channel logic level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 19 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 65 mΩ at VGS = 5 V. It supports a total power dissipation of 64 W and operates within a junction temperature range of -55 °C to +175 °C. The component is qualified to the AEC-Q101 standard for automotive applications.

Feature Summary

Compliant with AEC-Q101 standards for high-performance automotive environments
Rated for repetitive avalanche operation with ruggedness up to 25.3 mJ
True logic level gate functionality ensuring reliable switching at low voltages
Designed for thermally demanding conditions with a 175 °C junction rating

Applications

12 V, 24 V, and 48 V automotive systems
Motor, lamp, and solenoid control circuits
Transmission control modules
Ultra-high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the LFPAK56 package variant aligns with the PCB footprint design. Ensure the AEC-Q101 qualification status meets the target automotive reliability requirements before finalizing procurement specifications.

Selection Notes

Select this component when a robust N-channel MOSFET is required for automotive loads operating at 100 V. The logic level gate drive simplifies driver circuit design compared to standard threshold devices. Consider the thermal resistance characteristics and mounting base temperature dependencies for accurate power dissipation calculations in the final assembly.

Part Context

This device belongs to Nexperia's TrenchMOS family, engineered for low on-resistance and fast switching speeds. The LFPAK56 package provides enhanced thermal performance through a direct connection between the mounting base and the drain terminal, facilitating efficient heat transfer to the printed circuit board substrate.