BUK9Y6R0-60E,115

$1.24

Description：MOSFET N-CH 60V 100A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5e0cee02afd5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：5.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：39.4 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：6319 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：195W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y6R0-60E,115

Overview

The BUK9Y6R0-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 4.6 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 195 W under standard thermal conditions.

Feature Summary

Qualified to AEC-Q101 automotive standards for high-performance applications
Repetitive avalanche rated for robust operation
Operates reliably in thermally demanding environments up to 175 °C junction temperature
Features true logic level gate with threshold voltage greater than 0.5 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring low on-resistance and high current handling within a compact surface-mount footprint. The logic level gate drive capability simplifies interface with standard microcontrollers or drivers operating at 5 V. Ensure adequate thermal management via the mounting base to sustain the specified 100 A continuous current rating.

Part Context

This device belongs to Nexperia's portfolio of automotive-grade power MOSFETs designed for efficiency and reliability. It leverages TrenchMOS technology to achieve superior performance metrics compared to conventional planar structures. The LFPAK56 package provides excellent thermal dissipation characteristics suitable for dense PCB layouts in modern electronic systems.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Do not assume pin-compatible alternatives without confirming electrical specifications and thermal characteristics against the original datasheet requirements.