BUK9Y72-80E,115

Overview

The BUK9Y72-80E,115 is an N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 80 V and a maximum continuous drain current of 15 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 78 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 45 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Qualified to AEC-Q101 automotive standards for high-performance applications
• Operates reliably in thermally demanding environments with a 175 °C rating
• Features true logic level gate drive capability maintaining threshold above 0.5 V at elevated temperatures
• Rated for repetitive avalanche energy handling

Applications

• 12 V, 24 V and 48 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust automotive-grade N-channel switching with logic-level gate compatibility. The LFPAK56 package provides efficient thermal management for high-current applications. Ensure the design accounts for the 175 °C junction temperature limit and utilizes the repetitive avalanche rating where inductive load switching occurs.

Part Context

This part belongs to Nexperia's BUK9Y series of TrenchMOS logic level MOSFETs. These devices are engineered for high-efficiency power switching in automotive and industrial sectors. The BUK9Y72-80E specifically targets applications needing low on-resistance and high reliability within the 80 V voltage class.

Replacement Considerations

Direct substitutes must match the 80 V rating, 78 mΩ RDS(on), LFPAK56/SOT669 package, and AEC-Q101 qualification. Verify pinout compatibility and thermal characteristics before substitution.