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The BUK9Y7R2-60RAX is a dual N-channel logic level MOSFET manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in an LFPAK56 (PowerSO8) package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 13 A at 25 °C. Its maximum on-resistance is specified as 7.2 mΩ. The component is qualified to the AEC-Q101 standard for automotive applications, supports a junction temperature up to 175 °C, and includes repetitive avalanche rating capabilities.
Verify the specific suffix RAX against official Nexperia documentation to confirm tape and reel packaging specifications. Ensure the order matches the exact part number variant required for your assembly process. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement.
Select this component for designs requiring dual N-channel isolation in a space-constrained footprint. The logic level gate drive simplifies control circuitry for low-voltage microcontrollers. Verify thermal management requirements given the 175 °C operating limit and ensure the PCB layout supports the LFPAK56 package thermal dissipation characteristics.
This device belongs to Nexperia's BUK9Y series of 60 V logic level MOSFETs. These components are engineered for high-performance automotive environments using TrenchMOS technology. The series emphasizes efficiency and reliability, offering a balance of low conduction losses and robust thermal performance suitable for demanding power switching applications.
Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements from other manufacturers without validating electrical parameters and package dimensions against the original datasheet.
Yes, it is designed and qualified to the AEC-Q101 standard for high-performance automotive applications.
The device is suitable for thermally demanding environments with a maximum junction temperature rating of 175 °C.