BUK9Y8R7-60E,115

$1.11

Description：MOSFET N-CH 60V 86A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cccf7364f3b2 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 86A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：4570 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：147W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y8R7-60E,115

Overview

The BUK9Y8R7-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 86 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 8.7 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 147 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Compliant with the AEC-Q101 standard for automotive applications
Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
Rated for repetitive avalanche energy to withstand demanding electrical stress
Designed for thermally demanding environments with a 175 °C junction temperature capability

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component status remains active for new designs by consulting the latest Nexperia product database. Ensure the LFPAK56 footprint aligns with the SOT669 outline dimensions during PCB layout. Cross-reference the marking code 98E760 for authenticity checks upon receipt.

Selection Notes

Select this component when low on-state resistance is critical for efficiency in 60 V logic-level switching applications. The LFPAK56 package provides superior thermal performance compared to standard surface-mount options. Verify that the gate drive voltage meets the logic level requirements for full enhancement at elevated temperatures. Consider the repetitive avalanche rating if the application involves inductive load switching.

Part Context

This device belongs to the Nexperia BUK9Y series of N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low RDS(on) within the compact LFPAK56 package. The series is qualified to AEC-Q101 standards, ensuring reliability in high-performance automotive electronic systems requiring robust power switching capabilities.