Single Bipolar Transistors BUX44 product image

BUX44

$3.94
  • Description:TRANS NPN DARL 400V 8A TO-3
  • Series:-

SKU:1e39c73583c3 Category: Brand:

  
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BUX44 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is TRANS NPN DARL 400V 8A TO-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BUX44

  • Description:TRANS NPN DARL 400V 8A TO-3
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:120 W
  • Frequency - Transition:8MHz
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BUX44

BUX44

Single Bipolar Transistors Overview

The BUX44 is an NPN Darlington bipolar junction transistor manufactured by Harris Corporation, designed for high-power switching and amplification applications. It features a collector-emitter breakdown voltage of 400 V and a maximum continuous collector current of 8 A. The device has a transition frequency of 8 MHz and a maximum power dissipation of 120 W. It utilizes a TO-3 through-hole package.

Single Bipolar Transistors Feature Summary

  • NPN Darlington configuration for high current gain
  • High voltage capability with 400V collector-emitter breakdown
  • Robust power handling at 120W maximum dissipation

Single Bipolar Transistors Applications

  • High-power switching circuits
  • Linear amplification stages
  • Industrial control systems requiring high voltage isolation

Single Bipolar Transistors Procurement Notes

Verify the manufacturer source carefully, as Harris Corporation's semiconductor assets were acquired. Ensure the specific lot date code aligns with your production timeline. Confirm that the TO-3 package dimensions match your thermal management design requirements before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when high voltage blocking and substantial current drive are required in a single package. The Darlington structure simplifies base drive requirements compared to standard BJTs. Evaluate thermal resistance constraints given the 120W power rating and ensure adequate heatsinking for the TO-3 enclosure.

Single Bipolar Transistors Part Context

This discrete semiconductor belongs to the Bipolar (BJT) category, specifically Single Transistors. It serves as a fundamental active element in power electronics, distinct from integrated logic or linear ICs. Its classification emphasizes its role in direct current and signal amplification rather than complex digital processing.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for equivalent NPN Darlington transistors with matching 400V/8A ratings. Verify pinout compatibility for the TO-3 package if substituting with parts from other manufacturers to ensure correct circuit integration.

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