BUZ10

$0.51

Description：MOSFET N-CH 50V 23A TO220AB
Series：STripFET™
Mfr：STMicroelectronics
Package：Tube

SKU:88d40cd22e0b Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 23A TO220AB
Series：STripFET™
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：70mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

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BUZ10

Overview

The BUZ10 is an obsolete N-channel Power MOSFET manufactured by STMicroelectronics, housed in a TO-220 package. It features a drain-source voltage rating of 50 V and a continuous drain current capability of 23 A at 25 °C case temperature. The device exhibits a typical on-resistance of 0.06 Ω and supports a maximum total power dissipation of 75 W. It includes avalanche-rated technology with single-pulse energy handling up to 150 mJ and operates at junction temperatures up to 175 °C.

Feature Summary

Features avalanche rugged technology verified through 100% avalanche testing for enhanced reliability under inductive load conditions.
Provides high current capability suitable for demanding switching applications requiring low conduction losses.
Supports operation at elevated junction temperatures up to 175 °C for robust thermal performance.

Applications

High current, high speed switching circuits
Solenoid and relay drivers
DC-DC and DC-AC converters
Motor control systems
Automotive environments including injection, ABS, air-bag, and lamp drivers

Procurement Notes

This component is officially classified as obsolete by the manufacturer. Verify availability through secondary distributors or surplus suppliers. Confirm that the silicon lot datecode begins with Z or K to ensure characterization matches the provided datasheet specifications. Review end-of-life notices for potential supply constraints.

Selection Notes

Select this part only if the application requires a 50 V N-channel MOSFET with specific avalanche energy ratings. Evaluate thermal management requirements carefully due to the 75 W dissipation limit. Consider modern replacements if long-term supply continuity is critical for production cycles.

Part Context

The BUZ10 belongs to the STripFET family of power transistors designed for efficient power conversion. It utilizes planar technology to achieve low on-resistance and high blocking voltage capabilities within a standard through-hole package.