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Product Detailed Parameters
- Description：MOSFET N-CH 50V 30A TO220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The BUZ11-NR4941 is an N-channel silicon MOSFET manufactured by onsemi, housed in a TO-220-3 through-hole package. It features a drain-source breakdown voltage of 50 V and a continuous drain current rating of 30 A. The device exhibits a maximum on-resistance of 40 mOhms and supports gate-source voltages up to ±20 V. With a threshold voltage of 2.1 V, it operates within a temperature range of -55 °C to +150 °C and dissipates up to 75 W of power.
Feature Summary
- Enhancement-mode N-channel configuration for efficient switching control
- Robust thermal management capabilities with high power dissipation rating
- Low on-resistance design to minimize conduction losses
- Through-hole mounting for secure mechanical attachment
Applications
- General-purpose power switching circuits
- DC motor drive systems
- Power amplification stages
Procurement Notes
Verify the specific NR4941 suffix against official onsemi documentation to confirm exact packaging or tape-and-reel specifications. Ensure the procurement channel is authorized to guarantee component authenticity and traceability. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing supply agreements.
Selection Notes
Select this component when a 50 V N-channel MOSFET with through-hole mounting is required. The 30 A current rating and low on-resistance make it suitable for moderate-power applications. Verify that the thermal environment allows for adequate heat dissipation given the 75 W power rating and TO-220-3 package constraints.
Part Context
This part belongs to the BUZ11 series of power MOSFETs from onsemi. The series is characterized by high current handling and robust construction. The BUZ11-NR4941 variant specifically denotes the manufacturer's designated ordering code for this particular package and configuration within the broader product line.
Replacement Considerations
Direct substitutes must match the 50 V, 30 A, N-channel specification and TO-220-3 package. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) against the original datasheet to ensure functional equivalence in the target circuit.
