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Product Detailed Parameters
- Description：MOSFET N-CH 50V 30A TO220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The BUZ11_R4941 is an N-Channel silicon MOSFET manufactured by onsemi, housed in a TO-220-3 through-hole package. It features a drain-source breakdown voltage of 50 V and a continuous drain current rating of 33 A. The device exhibits a maximum on-resistance of 40 mOhms at a gate-source voltage of 10 V. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation capacity of 75 W. The component utilizes enhancement mode operation and includes specific rise and fall times for switching applications.
Feature Summary
- N-Channel silicon construction for robust power switching
- Low on-resistance for efficient conduction
- High thermal stability for demanding environments
Applications
- Power switching circuits
- Motor control systems
- DC-DC converters
Procurement Notes
Verify the exact part number suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer's datasheet before procurement. Check for any specific handling requirements related to the TO-220-3 package during assembly.
Selection Notes
Select this component when a 50 V N-Channel MOSFET with high current capability is required. Ensure the application's thermal management can support the 75 W dissipation rating. Compare the 40 mOhm on-resistance against alternative devices if lower conduction losses are critical for the specific design.
Part Context
This part belongs to the BUZ11 series of power MOSFETs from onsemi. It is designed for general-purpose power switching applications requiring reliable performance in through-hole mounting configurations. The series is known for its balance of voltage rating and current handling capabilities.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure any replacement matches the TO-220-3 package and electrical ratings precisely.
