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Product Detailed Parameters
- Description：MOSFET N-CH 100V 21A TO220AB
- Series：SIPMOS®
- Mfr：Harris Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：85mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUZ21 is an N-Channel enhancement mode silicon gate power field effect transistor manufactured by Harris Corporation. It is designed for high-power switching applications, offering low on-resistance and high current-carrying capability. The device features a TO-220AB through-hole package. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 21 A at case temperature. The typical on-resistance is 0.085 Ω.
Feature Summary
- N-Channel enhancement mode silicon gate construction
- Low on-resistance for efficient power switching
- High current-carrying capability
- Through-hole TO-220AB package
Applications
- Switching regulators
- High-power switching applications
Procurement Notes
Verify the manufacturer origin, as Harris Corporation's semiconductor assets were acquired by Intersil and subsequently Microchip. Ensure the datasheet corresponds to the specific revision required for your design. Confirm package type and pinout compatibility with existing PCB footprints before procurement.
Selection Notes
Select this component for applications requiring robust N-channel MOSFET performance in a standard through-hole package. Consider the 100 V rating and 21 A current capacity against your circuit's peak and continuous load requirements. Evaluate thermal management needs given the TO-220AB package constraints.
Part Context
Harris Corporation was a significant producer of electronic components before merging with L3 Technologies in 2019 to form L3Harris Technologies. The BUZ21 represents part of their historical portfolio of power MOSFETs, which are now often managed under successor entities like Microchip Technology following industry consolidations.
Replacement Considerations
Check for equivalents from Intersil or Microchip, as they inherited Harris Semiconductor's product lines. Verify that any substitute maintains the same TO-220AB package and electrical characteristics, specifically the 100 V/21 A ratings and 0.085 Ω on-resistance.
