ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 200V 21A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
Download product information
Overview
The BUZ30A is an N-channel SIPMOS power transistor featuring enhancement mode operation and avalanche rating. It operates with a maximum drain-source voltage of 200 V and continuous drain current of 21 A at 26 °C case temperature. The device exhibits a maximum on-resistance of 0.13 Ω at 10 V gate drive. Pulsed drain current reaches 84 A, while single-pulse avalanche energy capability is rated at 450 mJ. Power dissipation is 125 W at 25 °C case temperature. Thermal resistance from junction to case is 1 K/W. Operating temperature range spans -55 °C to +150 °C.
Feature Summary
- SIPMOS technology providing robust performance in high-power applications
- Enhancement mode operation for standard logic-level control compatibility
- Avalanche-rated construction supporting energy absorption during switching transients
Applications
- High-efficiency DC-DC converters
- Motor control systems
- Power factor correction circuits
- Isolated power supply topologies
Procurement Notes
Verify component authenticity by cross-referencing the part number against official Infineon documentation. Confirm package type PG-TO-220-3 matches design requirements. Ensure thermal management solutions align with specified junction-to-case thermal resistance limits. Validate operating conditions remain within absolute maximum ratings for continuous and pulsed currents.
Selection Notes
Select this component when designing circuits requiring 200 V blocking capability with moderate current handling. Consider thermal constraints carefully as power dissipation depends heavily on case temperature. Evaluate avalanche energy requirements if inductive loads are present. Gate threshold voltage range supports efficient driving from common logic levels.
Part Context
This device belongs to Infineon's SIPMOS family of power transistors. SIPMOS technology utilizes self-aligned planar gate structures optimized for low on-resistance and high reliability. The BUZ30A represents a specific voltage and current class within this broader portfolio designed for general-purpose power switching applications.
Replacement Considerations
Check datasheets for alternative N-channel MOSFETs offering similar 200 V breakdown and 21 A current ratings. Verify pinout compatibility for direct replacement in existing PCB layouts. Compare thermal resistance values to ensure equivalent heat dissipation capabilities.
