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The BUZ31 E3045A is an N-channel silicon power MOSFET manufactured by Infineon Technologies. It features a 200 V drain-source voltage rating and supports a continuous drain current of 14.5 A at case temperature. The device utilizes a surface-mount PG-TO263-3 package, offering a thermal dissipation capacity of 95 W under case conditions. This component is designed for high-voltage switching applications requiring robust performance in a compact form factor.
Verify the specific suffix E3045A to confirm the PG-TO263-3 surface mount package variant. Ensure compatibility with standard lead-free soldering profiles as indicated by the RoHS designation. Cross-reference the manufacturer part number against official Infineon documentation to distinguish from through-hole equivalents like the BUZ31L series.
Select this component when a 200 V rating is required alongside surface mount constraints. Compare the 14.5 A current limit against peak load requirements. Evaluate the thermal resistance characteristics of the TO-263 package against the expected power dissipation in the target application environment.
This part belongs to the BUZ31 family of power MOSFETs. While the base model may refer to through-hole variants, the E3045A suffix specifically denotes the surface mount configuration. It serves as a high-voltage alternative to lower voltage devices in power electronics designs.
The BUZ31H3045A is a documented equivalent within the same product line. Verify pinout compatibility and thermal specifications before substitution.